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  september 2011 doc id 022223 rev 1 1/14 14 STGWA19NC60HD 31 a, 600 v, very fast igbt with ultrafast diode features low on-voltage drop (v ce(sat) ) very soft ultrafast recovery anti-parallel diode applications high frequency motor drives smps and pfc in both hard switch and resonant topologies description this device is an ultraf ast igbt. it utilizes the advanced power mesh? process resulting in an excellent trade-off between switching performance and low on-state behavior. figure 1. internal schematic diagram 1 2 3 to-247 table 1. device summary part number marking package packaging STGWA19NC60HD gwa19nc60hd to-247 long leads tube www.st.com
contents STGWA19NC60HD 2/14 doc id 022223 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STGWA19NC60HD electrical ratings doc id 022223 rev 1 3/14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 600 v i c (1) 1. calculated according to the iterative formula: continuous collector current at t c = 25 c 52 a i c (1) continuous collector current at t c = 100 c 31 a i cl (2) 2. vclamp = 80%v ces , t j = 150 c, r g = 10 , v ge = 15 v turn-off latching current 40 a i cp (3) 3. pulse width limited by maximum permissible j unction temperature and turn-off within rbsoa pulsed collector current 60 a i f diode rms forward current at t c = 25 c 20 a i fsm surge not repetitive forward current t p =10 ms sinusoidal 50 a v ge gate-emitter voltage 20 v p tot total dissipation at t c = 25 c 208 w t j operating junction temperature - 55 to 150 c table 3. thermal data symbol parameter value unit r thjc thermal resistance junction-case igbt 0.6 c/w thermal resistance junction-case diode 3 c/w r thja thermal resistance junction-ambient 50 c/w i c t c () t jmax () t c ? r thj c ? v ce sat () max () t jmax () i c t c () , () ------------------------------------------------------------------------------------------------------- =
electrical characteristics STGWA19NC60HD 4/14 doc id 022223 rev 1 2 electrical characteristics t j = 25 c unless otherwise specified) table 4. static symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 1 ma 600 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 12 a v ge = 15 v, i c = 15 a v ge = 15 v, i c =30 a,t j =100 c v ge = 15 v, i c =12 a,t j =125 c 1.8 2 2.5 1.6 2.5 v v ge(th) gate threshold voltage v ce = v ge , i c = 250 a 3.75 5.75 v i ces collector cut-off current (v ge = 0) v ce = 600 v v ce = 600 v,t j = 125 c 150 1 a ma i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 100 na g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward transconductance v ce = 15 v , i c = 12 a 5 s table 5. dynamic symbol parameter test conditions min. typ. max. unit c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25 v, f = 1 mhz, v ge = 0 - 1180 130 36 - pf pf pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 390 v, i c = 5 a, v ge = 15 v, figure 18 - 53 10 23 - nc nc nc
STGWA19NC60HD electrical characteristics doc id 022223 rev 1 5/14 table 6. switching on/off (inductive load) symbol parameter test cond itions min. typ. max. unit t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 390 v, i c = 12 a r g = 10 , v ge = 15 v, figure 19 - 25 7 1600 - ns ns a/s t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 390 v, i c = 12 a r g = 10 , v ge = 15 v, tj = 125 c figure 19 - 24 8 1400 - ns ns a/s t r(voff) t d(voff) t f off voltage rise time turn-off delay time current fall time v cc = 390 v, i c = 12 a r g = 10 , v ge = 15 v, figure 19 - 27 97 73 - ns ns ns t r(voff) t d(voff) t f off voltage rise time turn-off delay time current fall time v cc = 390 v, i c = 12 a r g = 10 , v ge = 15 v, t j = 125 c figure 19 - 58 144 128 - ns ns ns table 7. switching energy (inductive load) symbol parameter test conditions min. typ. max. unit e on e off (1) e ts 1. turn-off losses include also the tail of the collector current turn-on switching losses turn-off switching losses total switching losses v cc = 390 v, i c = 12 a r g = 10 , v ge = 15 v, figure 19 - 85 189 274 - j j j e on e off (1) e ts turn-on switching losses turn-off switching losses total switching losses v cc = 390 v, i c = 12 a r g = 10 , v ge = 15 v, t j = 125 c figure 19 - 187 407 594 - j j j table 8. collector-emitter diode symbol parameter test conditions min. typ. max. unit v f forward on-voltage i f = 12 a i f = 12 a, t j = 125 c - 2.6 2.1 - v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 12 a, v r = 40 v, di/dt = 100 a/s figure 20 - 31 30 2 - ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 12 a, v r = 40 v, t j =125 c, di/dt = 100 a/s figure 20 - 59 102 4 - ns nc a
electrical characteristics STGWA19NC60HD 6/14 doc id 022223 rev 1 2.1 electrical characteristi cs (curves) figure 2. output characteristics figure 3. transfer characteristics figure 4. transconductance figure 5. collector-emitter on voltage vs. temperature figure 6. gate charge vs. gate-source voltage figure 7. capacitance variations
STGWA19NC60HD electrical characteristics doc id 022223 rev 1 7/14 figure 8. normalized gate threshold voltage vs. temperature figure 9. collector-emitter on voltage vs. collector current figure 10. normalized breakdown voltage vs temperature figure 11. switching losses vs. temperature figure 12. switching losses vs. gate resistance figure 13. switching losses vs. collector current
electrical characteristics STGWA19NC60HD 8/14 doc id 022223 rev 1 figure 14. turn-off soa figure 15. thermal impedance figure 16. forward voltage drop vs. forward current 0 5 10 15 20 25 3 0 3 5 40 45 50 012 3 456 i(a) fm v (v) fm t =25c (m a xim u m v a l u e s ) j t =125c (m a xim u m v a l u e s ) j t =125c (typic a l v a l u e s ) j
STGWA19NC60HD test circuits doc id 022223 rev 1 9/14 3 test circuits figure 17. test circuit for inductive load switching figure 18. gate charge test circuit figure 19. switching waveform figure 20. diode recovery time waveform am01504v1 am01505v1 am01506v1 90 % 10 % 90 % 10 % v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcro ss 90 % 10 % am01507v1 i rrm i f di/dt t rr t a t b q rr i rrm t v f dv/dt
package mechanical data STGWA19NC60HD 10/14 doc id 022223 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
STGWA19NC60HD package mechanical data doc id 022223 rev 1 11/14 table 9. to-247 long leads mechanical data dim. mm. min. typ. max. a 4.90 5.15 d 1.85 2.10 e 0.55 0.67 f 1.07 1.32 f1 1.90 2.38 f2 2.87 3.38 g 10.90 bsc h 15.77 16.02 l 20.82 21.07 l1 4.16 4.47 l2 5.49 5.74 l3 20.05 20.30 l4 3.68 3.93 l5 6.04 6.29 m 2.27 2.52 v10 v1 3 v3 20 dia. 3.55 3.66
package mechanical data STGWA19NC60HD 12/14 doc id 022223 rev 1 figure 21. to-247 long leads drawing
STGWA19NC60HD revision history doc id 022223 rev 1 13/14 5 revision history table 10. document revision history date revision changes 14-sep-2011 1 initial release.
STGWA19NC60HD 14/14 doc id 022223 rev 1 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2011 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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